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TDIAM SB RAS

Novosibirsk Division of Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS “Technological Design Institute of Applied Microelectronics”
In English
In Russian
Registered organization name:
Novosibirsk Division of Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS "Technological Design Institute of Applied Microelectronics"
Physics
TDIAM SB RAS
2/1, Ac. Lavrentieva ave., Novosibirsk, Russia, 630090
Phone.:+7(383) 330-65-59
Fax:+7(383) 316-57-26
E-mail:ktipm@oesd.ru
Date of editing information: 22.12.2011
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